Seçilmiş elmi əsərləri

  1. Rustamov F.A., Darvishov N.H., Mamedov M.Z., Bobrova E.Y., Qafarova H.O.. Influence of acetic acid on the process of stain porous silicon formation at oxidant insufficiency. Azerb. J. Phys. 16, No. 3-4, 2010, pp. 89-91.
  2.  Rustamov F.A., Darvishov,N.H. Mamedov M.Z., Bobrova E.Y., Qafarova H.O.. Porous silicon bandgap broadening at natural oxidation. J. Lumin. 131, 2011, pp. 2078 - 2082.
  3. Rustamov F.A., Darvishov N.H., Mamedov,M.Z. Bobrova E.Y., . Qafarova H.O. Formation of lateral homogeneous stain etched porous silicon with acetic acid at oxidant insufficiency. Azerb. J. Phys. 18, No. 3, 2012, pp. 44 - 49
  4. Rustamov F.A., Darvishov N.H., Bagiev V.E., Mamedov M.Z., Bobrova E.Y., Qafarova.H.O. Influence of final treatment on the incubation period and antireflection properties of stain etched porous silicon. Phys. Status Solidi A. 210, No. 10, 2013, pp. 2174 - 2177.
  5. . Rustamov F.A., Darvishov N.H., Bagiev,V.E. Mamedov M.Z., Bobrova E.Y., Qafarova.H.O. Determination of size and bandgap distributions of Si nanoparticles from photoluminescence excitation and emission spectra in n-type stain etched porous silicon. J. Lumin. 154, 2014, pp.224–228.
  6. Rustamov F.A., Darvishov N.H., Mamedov M.Z., Eyvazova G.M., Bobrova E.Y., Qafarova H.O.. Reversible quenching of photoluminescence in stain etched porous silicon at HNO3 posttreatment and role of oxygen bonds. Journal of Luminescence. 195 (2018) 49-53