Özçelik S., Altundal Sh., Afandiyeva İ.M., Askerov Sh.Q., Abdullayeva L.K. Analogue of the inductance on the basis of (AL-TiW+PtSi)-nSi Shottky diodes, «Fizika» , AMEA-nın Fizika -Riyaziyyat və Texnika Elmləri Bölməsi, 2007,c. Xİİ, s.299-300.
Afandiyeva I.M., Askerov Sh.G., Abdullayeva L.K., Aslanov Sh.S. The obtaining of Al-Ti10W90/n-Si Schottky diodes and investigation of their interface surface state density. Solid State Electronics, 51, 2007, pp.1096-1100.
Afandiyeva I.M., Askerov Sh.G. Dökme İ., Altındal Ş., Abdullayeva L.K. The frequency and voltage dependent electrical characteristics of Al-TiW-Pd2Si/nSi structure using I-V, C-V and G/w-V measurements. Microelectronic Engineering. 85, 2008, pp.365-370.
Əfəndiyeva I.M., Əsgərov S.Q., Abdullayeva L.K., T.Z.Quliyeva, S.M.Qocayeva Muxtəlif olcülü Al-TiW/n-Si Sottki diodlari cəpər hündürlüyünün tədqiqi, Azerbaijan Journal of Physics, Fizika, 2010, vol.XVI, Number 2,. s. 20-23.
Afandiyeva I.M., Abdullayeva L.K. Photoluminescence study of metal films impact on silicon energetic structure. Journal of Qafqaz University, 2010 , Num.29, Vol. 1, s.95-99
Ağayev M.N., Səfərov V.H., Həsənov M.N., Abdullayeva L.K., Al80Ni20∕n–Si kontaktlarında istilik deqradasiyası, Bakı Universitetinin Xəbərləri, 2014, №2 , s.153-157
Afandiyeva I.M.,Abdullayeva L.K. Altindal Ş., Maril E., Guliyeva T.Z. The investigation of tunnel properties of AL-TIW-PtSi/n-Si (111)(MS) schottky barrier diodes (SBDS) in the wide temperature range, Journal of Qafqaz University, 2014,Number 2, Volume 2 , pp.107-118.
Afandiyeva, I.M. Altındal Ş., Abdullayeva L.K. Guliyeva T.Z. Gojayeva Sh.M. Bagirova S.E. Hasanov M.H. The frequency and voltage dependent and characteristics of Al–TiW–PtSi/n–Si structures at room temperature Journal of Qafqaz University, Number 2, Volume 3, 2015, pp.105-111.
Эфендиева И.М. Абдуллаева Л.К. Кулиева Т.З. Годжаева Ш.М. Багирова С.Э. АС-проводимость диодов шоттки Al-TiW-PtSi/n-Si, Journal of Qafqaz University, Number 1, Volume 3, 2015, pp.49-52.
Afandiyeva I.M., Abdullayeva L.K., Ş.Altindal . Illumination dependent electrical characteristics of PtSi/n-Si(111) Schottky Barrier Diodes (SBDs) at room temperature , Journal of Modern Technology & Engineering, vol.2, No.1, p.43-56, 2017
Askerov Sh.Q., Abdullayeva L.K., Hasanov.M.H. Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions, Semiconductors , Vol. 51, No. 5, pp. 620–622. 2017
Аскеров Ш.Г., Эфендиева И.М., Гасанов М.Г. Агамалиева Л.Ф.. Влияние термоотжига на электрофизических свойств Диодов Шоттки, Azərbaycan Texniki Universiteti, Elmi əsərlər, №1, s.51-54, 2018
Afandiyeva I.M., Altındal Ş., Bayramova A.I.. Self-assembled patches in PtSi/n-Si (111) diodes, Journal of Semiconductors, v.39, №5, pp. 054002-1---054002-7, 2018
Askerov, S. G., Abdullayeva, L. K., Hasanov, M. H. The influence of the metal microstructure on the breakdown mechanism of Schottky diodes. J Mater Phys Chem, 2018, 1(3), 1.
Askerov, S. G., Abdullayeva, L. K., Hasanov, M. G. Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems. Journal of Semiconductors, 2020, 41(10), 102101.